? 221 west industry court deer park, ny 11729-4681 phone (631) 586 7600 fax (631) 242 9798 ? ? world wide web - www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data data sheet 193, rev. c hermetic axial lead / melf schottky barrier diode description: a 45 volt, 1.0 amp, axial le ad/surface mount schottky barrier diode. maximum ratings all ratings are at t a = 25 o c unless otherwise specified. rating conditions min typ max unit peak inverse voltage (piv) - - 45 vdc average dc output current (i o ) - - 1.0 amps peak single cycle surge current (i fsm ) t p = 8.3 ms single half cycle sine wave, superimposed on rated load - - 25 amps(pk) thermal resistance ( jl ) junction to lead d = 0.375? - - 70 c/w thermal resistance ( jec ) junction to endcap - - 40 c/w junction temperature (t j ) - -55 - +125 c operating temperature (t op) - -55 - +125 c storage temp. (t stg ) - -55 - +150 c electrical characteristics characteristic conditions min typ max unit maximum forward voltage (v f ) i f = 1.0a (300 sec pulse, duty cycle < 2%) - - 0.49 volts maximum instantaneous reverse current at rated (piv) t a = 25 c t a = 100 c - - 0.05 4.0 amps mamps junction capacitance (c j ) v r = 5 vdc 0.01 f 1mhz v sig = 15 mv p-p - - 70 pf notes: - all ratings are at ta = 25 c unless otherwise specified. - maximum storage temperature range: -55 c to +150 c. - maximum operating temperature range: -55 c to +125 c (1N5819-1, 1n5819ur-1). derate linearly at 4.5 v/ c above t l or t ec = +100 c (1N5819-1), where t ec is at l = .375 inch. derate linearly at 14 ma/ c above t l or t ec = +55 c (1N5819-1), where t ec is at l = .375 inch. 1N5819-1 1n5819ur-1 jan jantx jantxv
? 221 west industry court deer park, ny 11729-4681 phone (631) 586 7600 fax (631) 242 9798 ? ? world wide web - www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron technical data data sheet 193, rev. c axial melf schottky barrier 1N5819-1 schottky barrier 1n5819ur-1 package dimensions - inches ( millimeters) package dimensions - inches ( millimeters) style b d g l style a b c d do-41 .028/.034 0.71/0.86 .08/.107 .203/.272 .160/.205 .406/.521 1.00/1.30 2.54/3.302 do-213ab .189/.205 .480/.521 .016/.022 0.41/0.56 0.001 min 0.03 min .094/.105 2.39/2.67 1N5819-1 1n5819ur-1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 forward voltage drop - v f (v) 10 -3 10 -2 10 -1 10 0 instantaneous forward current - i f (a) typical forward characteristics 100 c 125 c 25 c 0 102030405060 reverse voltage - v r (v) 10 -3 10 -2 10 -1 10 0 10 1 10 2 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 1 2 5 c 150 c 0 102030405060 reverse voltage - v r (v) 10 20 30 40 50 junction capacitance - c t (pf) typical junction capacitance
? 221 west industry court deer park, ny 11729-4681 phone (631) 586 7600 fax (631) 242 9798 ? ? world wide web - www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron technical data data sheet 193, rev. c disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety shoul d be ensured by using semiconduc tor devices that feature assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any th ird party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thir d party. when exporting these products (t echnologies), the necessary procedur es are to be taken in accordance with related laws and regulatio ns. 1N5819-1 1n5819ur-1
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